March 5, 2019, 2:57 p.m.
tutti - social network
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Encalhou na praia do Cassino em 1976
A nanostructured gate dielectric may have addressed the most significant obstacle to expanding the use of organic semiconductors for thin-film transistors. The structure, composed of a fluoropolymer layer followed by a nanolaminate made from two metal oxide materials, serves as gate dielectric and protects the organic semiconductor - which had previously been vulnerable to damage from the ambient environment.https://www.sciencedaily.com/releases/2018/01/180112151223.htm
