June 6, 2022, 6:08 p.m.
tutti - social network
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A nanostructured gate dielectric may have addressed the most significant obstacle to expanding the use of organic semiconductors for thin-film transistors. The structure, composed of a fluoropolymer layer followed by a nanolaminate made from two metal oxide materials, serves as gate dielectric and protects the organic semiconductor - which had previously been vulnerable to damage from the ambient environment.https://www.sciencedaily.com/releases/2018/01/180112151223.htm
Que iva cagar la pared,porque el parquete metido por un tio mas malo,esta muy grande con periodicos abajo pa ajustarlo y muy chueco ahi,y se mete chueco a la pared y solo tocar o empujar la daria golpes a la pared,esta contra el cadro de puerta,pero ante no y ellos la huvieran empujado de frente lado y en la pared de verdadero ieso y no placo ieso.
