Nov. 29, 2018, 1:05 a.m.
tutti - social network
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A nanostructured gate dielectric may have addressed the most significant obstacle to expanding the use of organic semiconductors for thin-film transistors. The structure, composed of a fluoropolymer layer followed by a nanolaminate made from two metal oxide materials, serves as gate dielectric and protects the organic semiconductor - which had previously been vulnerable to damage from the ambient environment.https://www.sciencedaily.com/releases/2018/01/180112151223.htm
Me faltara un juego de Bleach,One piece y de Marvel.
Va salir Marvel Future Revolution.
Va salir Marvel Future Revolution.
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